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HiPerFETTM Power MOSFETs
Q2-Class
IXFK 38N80Q2 IXFN 38N80Q2 IXFX 38N80Q2
VDSS ID25 RDS(on)
= = =
800 V 38 A 220 m
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md FC Weight 50/60Hz, RMS t =1 min IISOL < 1mA t = 1s Mounting torque Terminal torque Mounting force SOT-227B TO-264 SOT-227B PLUS-247 PLUS247 TO-264 SOT-227B Test Conditions Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 800 800 30 40 38 150 38 75 4.0 20 735 -55 ... +150 150 -55 ... +150 1.6mm (0.063in) from case for 10s (Plus247, TO-264) 300 2500 3000 V V V V A A A mJ J V/ns W C C C C V~ V~
trr 250 ns
PLUS 247TM (IXFX)
G
D
D (TAB)
TO-264 AA (IXFK)
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN) E153432
G
S*
S* D
* Either Source terminal can be used as main or Kelvin source terminal G = Gate S = Source D = Drain TAB = Drain
0.9/8 Nm/lb.in. 1.5/13 Nm/ib.in. 22...130/5...30 g 10 30 N/lb g g
Features Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier miniBLOC package version with Aluminum Nitrate isolation Advantages Easy to mount Space savings High power density
DS99150A(09/04)
Symbol
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2.0 4.5 200 TJ = 25C TJ = 125C 50 2 V V nA A mA
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 %
220 m
(c) 2004 IXYS All rights reserved
IXFK 38N80Q2
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 37 8340 VGS = 0 V, VDS = 25 V, f = 1 MHz 890 175 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1.0 (External), 16 60 12 190 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 44 88 0.17 TO-264 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Terminals:
IXFN 38N80Q2 IXFX 38N80Q2
PLUS 247TM Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 38 150 1.5 250 A A V ns C A
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
TO-264 AA Outline
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s, VR = 100 V 1 10
SOT-227B miniBLOC Outline
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXFK 38N80Q2
Fig. 1. Output Characteristics @ 25C
40 35 30 VGS = 10V 7V 90 80 70 6V 25 20 5.5V 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 5V VGS = 10V 8V 7V
IXFN 38N80Q2 IXFX 38N80Q2
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
60 50 40 30 20 10 0 0 3 6 9 12 5V 5.5V 6V
V D S - Volts Fig. 3. Output Characteristics @ 125C
40 35 30 VGS = 10V 7V 6V 5.5V 25 20 15 10 5 0 0 2 4 6 3.1 2.8 VGS = 10V
V D S - Volts
15
18
21
24
27
30
Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 38A I D = 19A
I D - Amperes
5V
V D S - Volts
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
45 40
Fig. 5. RDS(on) Norm alized to
2.8 2.6
0.5 ID25 Value vs. ID
VGS = 10V TJ = 125C
R D S ( o n ) - Normalized
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30
35
I D - Amperes
TJ = 25C
30 25 20 15 10 5 0
I D - Amperes
40
50
60
70
80
90
-50
-25
TC - Degrees Centigrade
0
25
50
75
100
125
150
(c) 2004 IXYS All rights reserved
IXFK 38N80Q2
IXFN 38N80Q2 IXFX 38N80Q2
Fig. 7. Input Adm ittance
50 45 40 70 60 50
Fig. 8. Transconductance
I D - Amperes
30 25 20 15 10 5 0 3.5 4 4.5 5
GS
g f s - Siemens
35
40 30 20 10 0
TJ = -40C 25C 125C
TJ = 125C 25C -40C
5.5
6
0
10
20
30
40
50
60
V
- Volts
I D - Amperes Fig. 10. Gate Charge
10 9 VDS = 400V I D = 19A I G = 10mA
Fig. 9. Source Current vs. Source-To-Drain Voltage
120
100 80
8 7
I S - Amperes
VG S - Volts
TJ = 25C
6 5 4 3 2 1
60 40 TJ = 125C
20 0 0.4 0.5 0.6 0.7
0
V S D - Volts
0.8
0.9
1
1.1
1.2
1.3
0
20
40
60
80
100 120 140 160 180 200
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
1000 C iss TJ = 150C TC = 25C 25s
Fig. 11. Capacitance
10000
Capacitance - picoFarads
I D - Amperes
100
R DS(on) Limit 1ms 10ms
100s
1000
C oss
10 DC C rss f = 1MHz 100 0 5 10 15 20 25 30 35 40 1 10 100 1000
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - Volts
IXFK 38N80Q2
IXFN 38N80Q2 IXFX 38N80Q2
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
0.18 0.16 0.14
R( t h ) J C - C / W
0.12 0.10 0.08 0.06 0.04 0.02 0.00 1 10 100 1000
Pu ls e W id th - m illis e c o n d s
(c) 2004 IXYS All rights reserved

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